avalanche voltage
英 [ˈævəlɑːnʃ ˈvəʊltɪdʒ]
美 [ˈævəlæntʃ ˈvoʊltɪdʒ]
网络 雪崩电压
双语例句
- Experiments were done to probe into the characteristics of APD. The relationships between avalanche voltage, dark current, photocurrent, NEP and temperature were educed separately.
通过实验探讨了APD的温度特性，得到了APD的雪崩电压、暗电流、光电流、等效噪声功率与温度的关系。 - Application of avalanche noise detection as a criterion for surface breakdown mechanism of high& voltage silicon p+ pnn+ junctions
雪崩噪声鉴别法在高压硅P~+PNN~+结表面击穿机理判定中的应用 - By using the definition of effective doping concentration gradient and depletion approximation, an analytical solution for avalanche breakdown voltage of double sided asymmetric linearly graded junction has been derived.
通过有效掺杂浓度梯度的定义和耗尽近似求解，得到非对称线性缓变结击穿电压的简洁表达式。 - Against the disadvantage of the conventional bias voltage control schemes and based on the multiplication mechanics, this paper analyzed the temperature how to have an effect on the avalanche gain, obtained the curves between bias voltage and temperature characteristic.
针对传统的偏压控制存在的缺陷，文章从APD的倍增机理出发，分析了温度对雪崩增益的影响，得到偏压与温度的特性曲线。 - The results of MEDICI simulation indicate that the technology helps improve the avalanche breakdown voltage to over 90% of parallel planar junctions, improve β 0 of low current densities by reducing parasitic effect and leakage current.
采用MEDICI模拟分析表明，该技术可将双极器件的击穿电压BVCB0提高到平行平面结的90%以上；可减小寄生效应和漏电流，有助于提高小电流β0； - Avalanche Breakdown Voltage Calculation of GaAs Gaussian Profile Schottky Diodes
高斯掺杂分布GaAs肖特基结的雪崩击穿电压 - Avalanche transistor series Q-switch circuit has rapid fall time ( 20 ns) of voltage, high laser pulse energy and narrow laser pulsewidth.
雪崩管串联式调Q电路退压时间大约为20ns，输出激光脉冲能量高，脉宽窄； - The study of avalanche breakdown voltage for hyperabrupt varactor diode
超突变结构变容二极管雪崩击穿电压的研究 - Based on the false alarm control theory and the characteristic of the chip microcomputer's convenience to treating and holding digital information, a numeric control bias circuit auto-tracing the avalanche breakdown voltage is designed.
基于偏压的虚警控制原理，利用单片机便于数据处理和存储的特点，设计了一个自动跟踪雪崩管击穿电压的数控偏压电路。 - Simulate the avalanche circuit in series with PSPICE module, design the high voltage short plus generation circuit by avalanche transistor in series for the sweep deflection circuit of streak camera.
运用PSPICE模型对串联雪崩电路进行了仿真，设计出了用雪崩三极管串联的高压短脉冲产生电路，该电路可以用于条纹相机中的扫描电路。 - The simulation analysis indicates that with this structure the avalanche breakdown voltage of RF power transistors can be increased to be over 90% of that for an ideal parallel planar junction, and the large current characteristics and frequency characteristics can be improved, too.
模拟分析表明，采用该结构，器件的雪崩击穿电压能提高到理想平行平面结的90%以上，器件的大电流特性和频率特性也有所改进。 - The design and fabrication of high-voltage power devices with avalanche breakdown bulk characteristic under high temperature needs to carefully control the breakdown voltage stability and surface characteristic of the devices as the power rate increases.
具有雪崩体特性击穿的高温高压大功率硅器件的设计和制造，需要对器件的耐压稳定性和表面特性进行细致地控制以获得优良特性。 - The Avalanche Effects on Current and Voltage Characteristics in SiGe HBT
SiGeHBT中雪崩击穿效应对电流电压特性的影响 - Avalanche voltage in the avalanche circuit is provided by adjustable DC voltage.
雪崩电路所需要的雪崩电压由可调直流电压提供。 - When avalanche photoelectric diodes ( APD) are operated above the breakdown voltage in Geiger mode, they can be used to detect single photon. Therefore, APD-based single photon detectors are wildly used in the fields of quantum information and weak light detection areas.
工作在盖革模式下的雪崩光电二极管可以用来探测单光子，被广泛地应用于量子信息领域与传统探测领域。 - Based on the practice model of actual power transmission lines, the effect of avalanche space charge to the corona onset voltage and corona onset field is analyzed.
在实际架空绞线模型的基础上，分析和计算了空间电荷对线路起晕电压和起晕场强的影响。 - PN junction is the foundation of almost all the power devices. The avalanche breakdown voltage of PN junction determines the work voltage range of related power devices.
PN结构成了几乎所有半导体功率器件的基础，其雪崩击穿电压直接决定了相关器件的工作电压范围。 - The results show that when the avalanche hot holes inject into oxide, interface states and neutral electron traps are generated, and then threshold voltage increases and sub-threshold current decreases.
分析认为雪崩热空穴注入栅氧化层，会产生界面态和大量中性电子陷阱，引起阈值电压增大、亚阈值电流减小。